MOSFET having a JFET embedded as a body diode

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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Details

C257S272000, C257S329000, C257S330000, C257SE29260, C257SE29265

Reexamination Certificate

active

07417266

ABSTRACT:
A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.

REFERENCES:
patent: 4967243 (1990-10-01), Baliga et al.
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 6809375 (2004-10-01), Takemori et al.
patent: 7084456 (2006-08-01), Williams et al.
patent: 7109551 (2006-09-01), Sugi et al.
patent: 7118970 (2006-10-01), Das et al.
patent: 2001/0001494 (2001-05-01), Kocon
patent: 2005/0215012 (2005-09-01), Williams et al.

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