Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2005-06-10
2008-08-26
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S272000, C257S329000, C257S330000, C257SE29260, C257SE29265
Reexamination Certificate
active
07417266
ABSTRACT:
A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.
REFERENCES:
patent: 4967243 (1990-10-01), Baliga et al.
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 6809375 (2004-10-01), Takemori et al.
patent: 7084456 (2006-08-01), Williams et al.
patent: 7109551 (2006-09-01), Sugi et al.
patent: 7118970 (2006-10-01), Das et al.
patent: 2001/0001494 (2001-05-01), Kocon
patent: 2005/0215012 (2005-09-01), Williams et al.
Chang Daniel
Li Jian
Yu Ho-Yuan
Morgan & Lewis & Bockius, LLP
QSpeed Semiconductor Inc.
Tran Minh-Loan T
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