MOSFET gate driver with a negative gate bias voltage

Details MOSFET gate driver with a negative gate bias voltage MOSFET gate driver with a negative gate bias voltage

2007-09-04

2007-09-04

Lam, Tuan T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S434000, C327S423000, C327S494000, C327S508000

Reexamination Certificate

active

10746681

ABSTRACT:
A circuit for preventing shoot-through in a high side switching transistor coupled in series with a low side switching transistor across a supply voltage, the circuit comprising a voltage reference circuit having an output providing a reference voltage which is negative with respect to the supply voltage provided to the high side switching transistor, the reference voltage being applied to the control electrode of the high side switching transistor when the high side switching transistor is off and the source of the high side switching transistor exceeds the reference voltage and the low side switching transistor is on.

REFERENCES:
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patent: 5481178 (1996-01-01), Wilcox et al.
patent: 5568044 (1996-10-01), Bittner
patent: 5627460 (1997-05-01), Bazinet et al.
patent: 5943227 (1999-08-01), Bryson et al.
patent: 6081075 (2000-06-01), Littlefield
patent: 6396250 (2002-05-01), Bridge
patent: 6696861 (2004-02-01), Baldwin et al.
patent: 6731486 (2004-05-01), Holt et al.
patent: 04-070118 (1992-03-01), None
patent: 05-268038 (1993-10-01), None

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