MOSFET driver with fault reporting outputs

Electricity: electrical systems and devices – Safety and protection of systems and devices – Voltage regulator protective circuits

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361100, 361 87, 363 50, H02H 712

Patent

active

055439942

ABSTRACT:
The fault latch and filter circuit used in a MOSgated driver for a high side power MOSgated device to turn off the MOSgated device high side output in response to a given fault condition is located in the high side of the circuit and in a floating well of a semiconductor chip containing the driver circuit. The fault latch and filter are connected to the output driver circuit through a gate which also receives the high side filter and latch which are operated by the input control logic circuits through a level-shift up circuit. The fault latch circuit has an output which is level-shifted down by a single PMOS device to a fault reporting latch circuit on the low side of the device.

REFERENCES:
patent: 4893211 (1990-01-01), Bynum et al.
patent: 5164659 (1992-11-01), Schultz et al.

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