MOSFET device having recessed gate-drain shield and method

Details MOSFET device having recessed gate-drain shield and method MOSFET device having recessed gate-drain shield and method

1998-03-30

1999-12-14

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Field plate electrode

438286, 438283, 438284, 438183, 257340, 257386, H01L 2176, H01L 21336, H01L 21338, H01L 2976

Patent

active

060017104

ABSTRACT:
A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.

REFERENCES:
patent: 4455565 (1984-06-01), Goodman et al.
patent: 5119149 (1992-06-01), Weitzel et al.
patent: 5243234 (1993-09-01), Lin et al.
patent: 5252848 (1993-10-01), Adler et al.
patent: 5918137 (1999-06-01), Ng et al.

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