Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-11-01
2005-11-01
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S069000, C257S213000
Reexamination Certificate
active
06960785
ABSTRACT:
A MOSFET includes a semiconductor substrate with a first region having a relatively thick first thickness and a second region having a relatively thin second thickness; a gate insulating layer pattern formed on the first region of the semiconductor substrate; a gate conductive layer pattern formed on the gate insulating layer pattern; an epitaxial layer formed on the second region of the semiconductor substrate so as to have a predetermined thickness; spacers formed on sidewalls of the gate conductive layer pattern and part of the surface of the epitaxial layer; a lightly-doped first impurity region formed in the semiconductor substrate disposed below the spacers and in the epitaxial layer; and a heavily-doped second impurity region formed in a portion of the semiconductor substrate, exposed by the spacers.
REFERENCES:
patent: 5648287 (1997-07-01), Tsai et al.
patent: 2002/0195660 (2002-12-01), Lee
patent: 1998-040751 (1998-08-01), None
patent: 2002-0091886 (2002-12-01), None
English language abstract of Korean Publication No. 1998-040751.
English language abstract of Korean Publication No. 2002-0091886.
Ahn Jong-hyon
Jin You-seung
LandOfFree
MOSFET and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOSFET and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET and method of fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3468268