MOSFET and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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C257S069000, C257S213000

Reexamination Certificate

active

06960785

ABSTRACT:
A MOSFET includes a semiconductor substrate with a first region having a relatively thick first thickness and a second region having a relatively thin second thickness; a gate insulating layer pattern formed on the first region of the semiconductor substrate; a gate conductive layer pattern formed on the gate insulating layer pattern; an epitaxial layer formed on the second region of the semiconductor substrate so as to have a predetermined thickness; spacers formed on sidewalls of the gate conductive layer pattern and part of the surface of the epitaxial layer; a lightly-doped first impurity region formed in the semiconductor substrate disposed below the spacers and in the epitaxial layer; and a heavily-doped second impurity region formed in a portion of the semiconductor substrate, exposed by the spacers.

REFERENCES:
patent: 5648287 (1997-07-01), Tsai et al.
patent: 2002/0195660 (2002-12-01), Lee
patent: 1998-040751 (1998-08-01), None
patent: 2002-0091886 (2002-12-01), None
English language abstract of Korean Publication No. 1998-040751.
English language abstract of Korean Publication No. 2002-0091886.

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