MOSFET and fabrication method

Details MOSFET and fabrication method MOSFET and fabrication method

1989-08-21

1992-02-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 44, 437 57, 437 60, H01L 21265

Patent

active

050875825

ABSTRACT:
A method of fabricating a MOSFET wherein sidewall spacers are provided adjacent the gate of the MOSFET, the method including the steps of providing an insulating layer which extends over the source, drain and gate of the MOSFET and which acts as an impurity diffusion barrier; and forming on the insulating layer sidewall spacers which are composed of an insulating material.

REFERENCES:
patent: 4642878 (1987-02-01), Maeda
patent: 4757026 (1988-07-01), Woo et al.
patent: 4764477 (1988-08-01), Chang et al.
patent: 4843023 (1989-06-01), Chiu et al.

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