Patent
1984-09-28
1986-10-28
Davie, James W.
357 32, 357 61, H01L 2714
Patent
active
046202099
ABSTRACT:
The disclosure relates to an infrared detector and method of making an infrared detector having HgCdTe detectors in the same focal plane of different compositions responsive to two or more different infrared frequency windows. This is accomplished by using SiO.sub.2 and/or Si.sub.x O.sub.y N.sub.z for masking and/or isolation during liquid phase epitaxial growth of the HgCdTe. The SiO.sub.2 and/or Si.sub.x O.sub.y N.sub.z are formed by plasma deposition.
REFERENCES:
patent: 4439912 (1984-04-01), Pollard et al.
Parker Sidney G.
York Rudy L.
Comfort James T.
Davie James W.
Epps Georgia Y.
Hoel Carlton H.
Sharp Melvin
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