MOS Voltage divider structure suitable for higher potential feed

Details MOS Voltage divider structure suitable for higher potential feed MOS Voltage divider structure suitable for higher potential feed

1983-01-31

1985-07-02

Larkins, William D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 51, 357 59, 361328, H01L 2704, H01G 438, H02M 508

Patent

active

045271801

ABSTRACT:
An MOS voltage divider is described which is particularly useful for dividing a relatively high voltage (e.g., 21 volts). Capacitance division is employed, thus, the divider consumes substantially no current. Capacitors are fabricated from first and second layers of polysilicon and an intermediate layer of silicon dioxide. Common centroid geometry is used to compensate for process variations.

REFERENCES:
patent: 1899176 (1933-02-01), Bailey
patent: 2944198 (1960-07-01), Louys
patent: 4033506 (1977-07-01), Braun
patent: 4246502 (1981-01-01), Kubinec
patent: 4419812 (1983-12-01), Topich
McCreary et al.; IEEE Journal of Solid-State Circuits; vol. SC-10; No. 6; Dec. 1975; pp. 371-379.
Hodges et al.; IEEE Journal of Solid-State Circuits; vol. SC-13; No. 3; Jun. 1978; pp. 285-294.

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