MOS voltage controlled lowpass filter

Wave transmission lines and networks – Automatically controlled systems – With control of equalizer and/or delay network

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Details

357 23, 357 51, H03H 710, H01L 2978

Patent

active

040926192

ABSTRACT:
An MOS field-effect device which may be fabricated as part of an integrated circuit having the general characteristics of a lowpass filter. A source and drain region define a long channel (e.g. 500 microns or longer). The cutoff frequency of this lowpass filter which is in the audio range, is controllable by the potential applied to a gate member insulated from the channel.

REFERENCES:
patent: 3022472 (1962-02-01), Tanenbaum et al.
patent: 3296462 (1967-01-01), Reddi
patent: 3754171 (1973-08-01), Anzai
MOSFET in Circuit Design, R. H. Crawford, McGraw Hill, N.Y., 1967, pp. 71-72.

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