MOS varactors with large tuning range

Details MOS varactors with large tuning range MOS varactors with large tuning range

2007-04-05

2009-11-17

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C438S514000, C438S526000

Reexamination Certificate

active

07618873

ABSTRACT:
A MOS varactor includes a shallow PN junction beneath the surface of the substrate of a MOS structure. In depletion mode, the depletion region of the MOS structure merges with the depletion region of the shallow PN junction. This increases the total width of the depletion region of the MOS varactor to reduce Cmin.

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Herbert S. Bennett et al., Device Technology Evolution for Si-Based RF Integrated Circuits, IEEE Transactions on Electron Devices, vol. 52, No. 7, Jul. 2005, pp. 1235-1258.

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