MOS varactor for LC VCOs

Details MOS varactor for LC VCOs MOS varactor for LC VCOs

2006-05-02

2006-05-02

Wells, Kenneth B. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S537000, C327S586000

Reexamination Certificate

active

07038527

ABSTRACT:
A metal oxide semiconductor (MOS) varactor device has a source and a drain connected to each other, and a back gate, electrically separate from the source and drain, which is connected to a circuit common mode point.

REFERENCES:
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patent: 2003/0141936 (2003-07-01), Staszewski et al.
patent: 2004/0263272 (2004-12-01), Ravi et al.
Andreani, P., et al “On the Use of MOS Varactors in RF VCO's”,IEEE Journal of Solid-State Circuits,vol. 35, No. 6, Jun. 2000, pp. 905910.
Bunch, R. L, et al “Large-Signal Analysis of MOS Varactors in CMOS-G LC VCOs”,IEEE Journal of Solid-State Circuits,vol. 38, No. 8, Aug. 2003, pp. 1325-1332.
Maget, J., et al “Influence of Novel MOS Varactors on the Performance of a Fully Integrated UMTS VCO in Standard 0.25-μm CMOS Technology”,IEEE Journal of Solid-State Circuits,vol. 37, No. 7, Jul. 2002, pp. 953-958.
Typpo, J. “A Back Gate Tunned PFET VCO”,Analog Integrated Circuits and Signal Processing,30, 265-269, 2002.

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