MOS type semiconductor device potential stabilizing circuit with

Details MOS type semiconductor device potential stabilizing circuit with MOS type semiconductor device potential stabilizing circuit with

1989-05-09

1990-05-29

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 3072968, H01L 2978, H01L 2702, H03K 301

Patent

active

049299891

ABSTRACT:
A MOS type semiconductor device forming an insulated gate field effect transistor and a potential stabilizing circuit connected between power voltage supply lines is disclosed. The potential stabilizing circuit includes first and second MOS type capacitors connected in series each other, and the dielectric film of each of the MOS type capacitors has the same thickness and is made of the same material as the gate insulating film of the transistor.

REFERENCES:
patent: 4758873 (1988-07-01), Monticelli
patent: 4769784 (1988-09-01), Doluca et al.

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