MOS type semiconductor device and method for manufacturing the s

Details MOS type semiconductor device and method for manufacturing the s MOS type semiconductor device and method for manufacturing the s

1990-09-05

1992-05-19

Jackson, Jr., Jerome

Fishing, trapping, and vermin destroying

357 233, 437 39, H01L 2906

Patent

active

051152908

ABSTRACT:
A MOS type semiconductor device and a method for the manufacture of the same are disclosed in which a gate electrode is so formed over a semiconductor substrate of a first conductivity type with a gate insulating film formed therebetween as to provide a three-layered structure composed of a first high melting point metal silicide layer formed on the gate insulating film, high melting point metal layer formed on the first high melting point metal silicide and a second high melting point metal silicide layer formed on the high melting point metal layer. In the gate electrode, a length of the first high melting point silicide layer defined in the same direction as that in which a channel region extends is made smaller in length than the high melting point metal layer.

REFERENCES:
patent: 4319395 (1982-03-01), Lund et al.
patent: 4434013 (1984-02-01), Bol
patent: 4558338 (1985-12-01), Sakata
patent: 4707723 (1987-11-01), Okamoto et al.
patent: 4735913 (1988-04-01), Hayes
patent: 4843033 (1989-06-01), Plumton et al.
patent: 4849376 (1989-07-01), Balzan et al.

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