MOS type semiconductor device

Details MOS type semiconductor device MOS type semiconductor device

1986-09-04

1987-08-18

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 2314, 357 13, 307200B, H01L 2978

Patent

active

046880658

ABSTRACT:
A MOS type semiconductor device with a gate protecting circuit for protecting an internal circuit is disclosed. Distance between the input section diffusion layer in the gate protecting circuit and the diffusion layers in the internal circuit is selected at such values that minority carriers derived from the diffusion layer in the internal circuit are prevented from reaching a depletion layer in the gate protecting circuit which is caused by the impression thereto of a surge voltage, and are also selected to at least ten times a predetermined minimum distance each separating the adjacent diffusion layers of those.

REFERENCES:
patent: 3403270 (1968-09-01), Pace et al.
patent: 3407339 (1968-10-01), Booher
patent: 3413497 (1968-11-01), Atalla
patent: 3555374 (1971-01-01), Usuda
patent: 3601625 (1981-08-01), Redwine
patent: 3967295 (1976-06-01), Stewart
patent: 4044373 (1977-08-01), Nomiya
patent: 4143391 (1979-03-01), Suzuki
patent: 4264941 (1981-04-01), London
patent: 4356502 (1982-10-01), Yamada
Patents Abstracts of Japan vol. 6, No. 151, Aug. 11, 1982 and JP-A-57-72376.

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