MOS type semiconductor device

Details MOS type semiconductor device MOS type semiconductor device

1977-05-17

1979-03-06

Wojciechowicz, Edward J.

357 41, 357 42, 357 59, 357 91, H01L 2978

Patent

active

041433882

ABSTRACT:
A MOS type semiconductor device, wherein at least one oblique face is provided on at least a part of a gate electrode which is provided on a principal face of said substrate with a gate insulation film inbetween, and at a specific depth from the oblique face, that is, in parallel with this oblique face, an ion-implanted layer is provided in a manner to obliquely cross the surface of said substrate. In this MOS type semiconductor device the channel is made immediately underneath the surface of the substrate and in the ion-implanted layer, and therefore the channel length is determined by the thickness of the ion-implanted layer. By controlling the thickness of the ion-implanted layer, a short channel length, which is required for improving the operating speed and/or the handling current capability of MOS type semiconductor devices, is obtainable.

REFERENCES:
patent: 3860454 (1975-01-01), Witt et al.
patent: 3897274 (1975-07-01), Stehlin et al.
patent: 4029522 (1977-06-01), De La Moneda

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