MOS type semiconductor device

Details MOS type semiconductor device MOS type semiconductor device

1975-10-14

1977-05-24

Wojciechowicz, Edward J.

H01L 2978

Patent

active

040259404

ABSTRACT:
The channel current of an MOS transistor is controlled by varying the potential distribution in the source area. The source area is formed of a resistive material and provided with at least two electrodes on at least one of which a controlling voltage is applied. The current between the source and the drain terminals increases more rapidly than the linear change with respect to the increase in the voltage between the terminals, i.e. current-voltage characteristics are convex toward the lower direction. This device has excellent characteristics for use as a discharge impedance element in a sustain function circuit of an indirect keying or other circuit of an electronic musical instrument.

REFERENCES:
patent: 3328601 (1967-06-01), Rosenbaum
patent: 3745426 (1973-07-01), Olmstead
patent: 3812517 (1974-05-01), Sato et al.

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