MOS type power semiconductor switching device capable of protect

Details MOS type power semiconductor switching device capable of protect MOS type power semiconductor switching device capable of protect

1995-03-16

1995-12-05

Wong, Peter S.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

333214, 327498, H01L 2978, G05F 156

Patent

active

054732760

ABSTRACT:
In an MOS type power switching device, no leak current flows during an OFF-state, and a high current driveability is realized during a normal load condition. Furthermore, a drive current is reduced during a short-circuited load condition. The MOS (metal-oxide semiconductor) type power switching device with a drain terminal, a source terminal and a gate terminal, includes: a MOS type power switching element whose drain is connected to the drain terminal and whose source is connected to the source terminal; a MOS type semiconductor device whose drain is connected to the drain of the MOS type power switching element and whose gate is connected to the gate terminal together with a gate of the MOS type power switching element; a bipolar semiconductor controlling element whose collector is connected to the gate terminal together with both of the gates of the MOS type power switching element and of the MOS type semiconductor element, and whose emitter is connected to the source terminal together with the source of the MOS type power switching element; and a current limiting element connected between a source of the MOS type semiconductor device and a base of the bipolar type controlling element in such a manner that when no gate biasing voltage is applied to the gate terminal, at least MOS type semiconductor device is turned OFF, whereby no current flows from the drain terminal to the source terminal through any current paths. This current limiting element is a resistor.

REFERENCES:
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patent: 4893158 (1990-01-01), Mihara et al.
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 5138516 (1992-08-01), Chapman
patent: 5303110 (1994-04-01), Kumagai
Dolny, et al, "Silicon-on-Insulator Approach for Power IC's Integrating Vertical DMOS and Polycrystalline-Silicon CMOS Thin-Film Transistors", IEEE Electron Device Letters, vol. 13, No. 10: pp. 516-518, Oct. (1992).
Robb, et al, "Industry Trends in Power Integrated Circuits", IEDM: pp. 792-795 (1988).

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