MOS type input circuit

Details MOS type input circuit MOS type input circuit

1991-04-25

1992-12-29

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307290, H03K 1716

Patent

active

051754452

ABSTRACT:
The source-drain paths of p-channel first and second MOSFETs are connected in series between a node, to which a high-potential power source voltage is supplied, and a signal output node. The source-drain paths of n-channel third and fourth MOSFETs are connected in series between the signal output node and a node to which a low-potential power source voltage is supplied. A signal from an input node is supplied to the gates of said four MOSFETs in a parallel manner. The source-drain path of an n-channel fifth MOSFET is connected in parallel to the source-drain path of the second MOSFET which is not directly connected to the node of the high-potential power source voltage. The gate of the fifth MOSFET is connected to the node of the high-potential power source voltage. The source-drain path of a p-channel sixth MOSFET is connected in parallel to the source-drain path of the third MOSFET which is not directly connected to the node of the low-potential power source voltage. The gate of the sixth MOSFET is connected to the node of the low-potential power source voltage.

REFERENCES:
patent: 3657575 (1972-04-01), Taniguchi et al.
patent: 4239193 (1988-04-01), Doty, II
patent: 4464587 (1984-08-01), Suzuki et al.
patent: 4563594 (1986-01-01), Koyama
patent: 4656373 (1987-04-01), Plus
patent: 4806802 (1989-02-01), Okitaka et al.
patent: 5034629 (1991-07-01), Kinugasa et al.

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