Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Patent
1999-03-11
2000-11-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
257192, 257443, 257446, 438 73, H01L 31062, H01L 31113
Patent
active
061506761
ABSTRACT:
A MOS type image sensor has an image area that consists of a matrix of pixels and a peripheral circuitry area that drives the image area. To make the MOS type image sensor finer, each of the pixels consists of a second p-well region having a lower impurity concentration than a first p-well region disposed in the peripheral circuitry area; a photodiode having a first main electrode region made of the second p-well region and a second main electrode region formed as a first n-diffusion layer disposed at the surface of the second p-well region; a read transistor having a first main electrode region made of the first n-diffusion layer, a second main electrode region formed as a second n-diffusion layer disposed at the surface of the second p-well region, a gate insulation film disposed on the surface of the second p-well region between the first and second n-diffusion layers, and a gate electrode disposed on the gate insulation film and connected to a read signal line; and an amplification transistor disposed in a third p-well region, having a gate electrode connected to the second main electrode region of the read transistor, a first main electrode region connected to an output signal line, and a second main electrode region. Since the impurity concentration of the second p-well region is low, scaled design rules are employable without causing "white pixels", sensitivity deterioration, signal read voltage increase, or short-channel effect.
REFERENCES:
patent: 5986297 (1999-11-01), Guidash et al.
patent: 6051857 (2000-04-01), Miida
patent: 6072206 (2000-06-01), Yamashita et al.
Kabushiki Kaisha Toshiba
Mintel William
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