MOS transistor with shield coplanar with gate electrode

Details MOS transistor with shield coplanar with gate electrode MOS transistor with shield coplanar with gate electrode

1998-04-27

1999-06-29

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Field plate electrode

438159, 438183, 438267, 257294, 257340, H01L 21336, H01L 2910

Patent

active

059181370

ABSTRACT:
A MOS transistor including a gate electrode on a gate oxide over a channel region between a source region and a drain region also includes a shield electrode at least partially on the gate oxide adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and between the gate electrode and drain region. Placing the shield electrode on the gate oxide improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.

REFERENCES:
patent: 5445978 (1995-08-01), Yilmaz
patent: 5672526 (1997-09-01), Kawamura

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