Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-03-18
2009-11-17
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE29289
Reexamination Certificate
active
07619248
ABSTRACT:
A MOS transistor with self-aligned source/drain terminals, and methods for its manufacture. The transistor generally includes an electrically functional substrate, a dielectric film on portions of the substrate, a gate on the dielectric film, and polycrystalline source and drain terminals self-aligned with the gate. The method generally includes forming an amorphous semiconductor material on a gate and on exposed portions of an electrically functional substrate, irradiating an upper surface of the amorphous semiconductor material to form self-aligned polycrystalline semiconducting source/drain terminal layers, and (optionally) selectively removing the non-irradiated amorphous semiconductor material portions. The present invention advantageously provides MOS thin film transistors having reliable electrical characteristics quickly, efficiently, and/or at a low cost by eliminating one or more conventional photolithographic steps.
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Brown Turner Sharon E.
Fortney Andrew D.
Kovio Inc.
Movva Amar
Smith Bradley K
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