MOS transistor with a charge induced drain extension

Details MOS transistor with a charge induced drain extension MOS transistor with a charge induced drain extension

1989-12-15

1992-04-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 357 233, H01L 21336

Patent

active

051089408

ABSTRACT:
A process is taught which provides very shallow conductive regions in a semiconductor material by the formation of a fixed charge placed in an overlying dielectric layer which induces an inversion region in the underlying semiconductor. The inversion region so formed is used as a MOSFET drain extension between a drain contact region and the channel located beneath the gate region. The conductivity of the induced inversion region is controlled by the concentration of the ionic charge present in the dielectric layer.

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