MOS transistor switching circuit without body effect

Details MOS transistor switching circuit without body effect MOS transistor switching circuit without body effect

1996-03-29

1998-05-05

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327399, 327434, 327534, H03K 17687

Patent

active

057480290

ABSTRACT:
A switching circuit utilizing MOS transistors without body effect having a first transistor inserted with source and drain terminals between two connection terminals, and a second and third transistors inserted in series by means of their respective source and drain terminals between the first transistor and a ground. The gate terminal of the second transistor is connected to the gate terminal of the first transistor to which is applied a command signal. Upon switching a signal is applied in phase opposition to the command signal to the gate terminal of the third transistor. The substrates of the first and the second transistors are connected to a connection node between the second and third transistors. The substrate of the third transistor is connected to ground.

REFERENCES:
patent: 3866064 (1975-02-01), Gregory et al.
patent: 5191244 (1993-03-01), Runaldue et al.
Patent Abstracts of Japan, vol. 14, No. 51 (E-881) (3994) Jan. 30, 1990 & JP-A-01 276 920 Ricoh Co. Ltd, Nov. 7, 1989.
Patent Abstracts of Japan, vol. 12, No. 457 (E-688) Nov. 1988 & JP-A-63 182 907 Hitachi Ltd Jul. 28, 1988.

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