MOS transistor structure for electro-static discharge protection

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257379, H01L 2710, H01L 2976, H01L 2994, H01L 31062

Patent

active

057214395

ABSTRACT:
A MOS transistor structure for an electro-static discharge (ESD) protection circuit of an integrated circuit device. The ESD protection transistor has a structure that comprises a drain diffusion region formed in the silicon substrate of the integrated circuit device, a source diffusion region formed in the silicon substrate, a gate formed in the silicon substrate, and a number of isolated islands evenly distributed throughout the drain diffusion region. The isolated islands provide substantially uniform diffusion resistance between the drain contacts and the gate while increasing the diffusion resistance of the drain region to a level suitable for ESD current protection. The disclosed MOS transistor structure may be fabricated by a salicide technology-based fabrication procedure that is completely compatible with the salicide technology used for the making of the circuitry for the IC device.

REFERENCES:
patent: 5250823 (1993-10-01), Veendrick
patent: 5270565 (1993-12-01), Lee et al.
patent: 5378919 (1995-01-01), Oohiai
Mead et al, Intro. to VLSI Systems pp. 5-7, 1980.
Gadi Krieger, Nonuniform ESD Current Distribution Due to Improper Metal Routing, 1991 EOS/ESD Soymposium Proceedings, pp. 104 -109.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MOS transistor structure for electro-static discharge protection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor structure for electro-static discharge protection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor structure for electro-static discharge protection will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1876700

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.