Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Patent
1996-04-10
1998-02-24
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
257379, H01L 2710, H01L 2976, H01L 2994, H01L 31062
Patent
active
057214395
ABSTRACT:
A MOS transistor structure for an electro-static discharge (ESD) protection circuit of an integrated circuit device. The ESD protection transistor has a structure that comprises a drain diffusion region formed in the silicon substrate of the integrated circuit device, a source diffusion region formed in the silicon substrate, a gate formed in the silicon substrate, and a number of isolated islands evenly distributed throughout the drain diffusion region. The isolated islands provide substantially uniform diffusion resistance between the drain contacts and the gate while increasing the diffusion resistance of the drain region to a level suitable for ESD current protection. The disclosed MOS transistor structure may be fabricated by a salicide technology-based fabrication procedure that is completely compatible with the salicide technology used for the making of the circuitry for the IC device.
REFERENCES:
patent: 5250823 (1993-10-01), Veendrick
patent: 5270565 (1993-12-01), Lee et al.
patent: 5378919 (1995-01-01), Oohiai
Mead et al, Intro. to VLSI Systems pp. 5-7, 1980.
Gadi Krieger, Nonuniform ESD Current Distribution Due to Improper Metal Routing, 1991 EOS/ESD Soymposium Proceedings, pp. 104 -109.
Meier Stephen
Winbond Electronics Corporation
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