MOS transistor structure

Details MOS transistor structure MOS transistor structure

1974-08-19

1976-02-03

Edlow, Martin H.

357 52, 357 55, H01L 2978, H01L 2934, H01L 2906

Patent

active

039368580

ABSTRACT:
An MOS transistor is constructed such that the insulation covering the field of the device and in direct contact with the top surface of the semiconductor material in which the source and drain regions are formed, tapers gradually in thickness to that of the insulation under the gate electrode thereby to prevent abrupt step-heights in the transition region between the field insulation and the gate insulation.

REFERENCES:
philips Research Reports -- Vol. 26, No. 3 -- June 1971 pp. 166-180.

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