Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Patent
1997-05-29
1998-09-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
257632, 257640, H01L 2714
Patent
active
058014284
ABSTRACT:
An MOS transistor has a gate electrode is electrically conductively connected to an exposed contact area (pad). The contact area is electrochemically corrosion-resistant and is dimensioned for connection to a living cell. The surface topology is relatively flat and the surface, with the exception of the contact area, is protected with a dielectric passivation layer.
REFERENCES:
patent: 4005455 (1977-01-01), Watrous, Jr. et al.
patent: 4437969 (1984-03-01), Covington et al.
patent: 4508613 (1985-04-01), Busta et al.
patent: 4921591 (1990-05-01), Mochizuki et al.
Patent Abstracts of Japan, vol. 9, No. 210(p.-383), 28 Aug. 1985 & JP 60-073352 dated 25 Apr. 1985, Hitachi Ltd., Chemical FET Sensor, 1 page.
Bertagnolli Emmerich
Felde Andreas Vom
Kerber Martin
Crane Sara W.
Siemens Aktiengesellschaft
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