MOS transistor embedded inductor device using multi-layer metall

Details MOS transistor embedded inductor device using multi-layer metall MOS transistor embedded inductor device using multi-layer metall

1997-04-30

1998-08-11

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257528, H01L 2900

Patent

active

057930961

ABSTRACT:
An inductor device with a MOS transistor internally installed is disclosed, in which an inductor can be arbitrarily connected in series or in parallel to the respective terminals of MOS transistors by applying a multi-layer wiring technique, thereby reducing the chip area. Within an inductor structure, MOS transistors which have an active region width of W .mu.m are formed in the number of n, and an inductor wire is connected to an arbitrary terminal of the MOS transistors by employing a multi-layer metal wiring process. Thus the inductor is connected to an arbitrary terminal of the MOS transistors in series. Thus an inductor device in which MOS transistors having a channel width of W.times.n .mu.m are internally installed is formed.

REFERENCES:
patent: 5627458 (1997-05-01), Nevin
patent: 5629553 (1997-05-01), Ikeda et al.
Bunghartz, J.N., et al. High-Q Inductors in Standard Interconnect Technology and its Application to an Integrated RF power Amplifier, IEDM, pp. 1015-1017.
Nguyen, N.M., et al. A 1.8-GHz Monolithic LC Voltage-Controlled Oscillator, IEEE Journal of Solid-State Circuits, vol. 27, No. 3, Mar. 1992.

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