MOS transistor circuits having matched channel width and length

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307448, 307584, 307304, H03K 17687

Patent

active

047148403

ABSTRACT:
The voltage gain of an MOS transistor inverter stage is made independent of the device threshold voltages and of channel lengths by making the length and width of the channel region of the upper load transistor equal to the length and width of the channel region of the lower driver transistor.

REFERENCES:
patent: 3652906 (1972-03-01), Christensen
patent: 3675143 (1972-07-01), Greene
patent: 3845324 (1974-10-01), Feucht
patent: 3898477 (1975-08-01), Buchanan
patent: 4016431 (1977-04-01), Henle et al.
patent: 4042839 (1977-08-01), Araki
patent: 4199695 (1980-04-01), Cook et al.
patent: 4430583 (1984-02-01), Shoji

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