MOS Transistor circuit with a power-down function

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307304, 307468, 307581, 365227, H03K 17687, H03K 19094, H03K 1920

Patent

active

043842208

ABSTRACT:
An MOS transistor circuit contains at least one "zero" threshold mode transistor to provide a power-down function for the circuit. The "zero" threshold mode transistor is connected between an enhancement-mode MOS driver transistor and a depletion-mode MOS load transistor.

REFERENCES:
patent: 4094012 (1978-06-01), Perlegos et al.
patent: 4096584 (1978-06-01), Owen et al.
patent: 4264828 (1981-04-01), Perlegos et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MOS Transistor circuit with a power-down function does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS Transistor circuit with a power-down function, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS Transistor circuit with a power-down function will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1568562

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.