MOS transistor and method for making the same

Details MOS transistor and method for making the same MOS transistor and method for making the same

1996-04-23

1997-01-28

Niebling, John

Fishing, trapping, and vermin destroying

437 62, 437 86, 437200, 437202, H01L 21265, H01L 2120, H01L 2144, H01L 21302

Patent

active

055977391

ABSTRACT:
Transistor devices comprise a gate electrode, a channel region formed beneath the gate electrode, a source region in contact with one side of the channel region, a first conductive region formed in a semiconductor layer at the outer side of the source region and made of a metal or metal compound, a drain region formed in contact with the other side of the channel region, and a second conductive region formed in the semiconductor layer at the outer side of the drain region and consisting of a metal or a metal compound. The transistor has an SOI structure which has an improved breakdown voltage between the source region and the drain region with low sheet resistances of the source and drain regions. Methods for making the transistor devices are also described.

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