MOS transistor and manufacturing method thereof

Details MOS transistor and manufacturing method thereof MOS transistor and manufacturing method thereof

2008-11-03

2010-11-23

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S066000, C438S075000, C438S080000, C438S144000, C257SE31083

Reexamination Certificate

active

07838319

ABSTRACT:
There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer, wherein the top surface of the gate is exposed, a gate oxide layer formed on the insulating layer and the gate, a silicon layer formed on the gate oxide layer, and a source region and a drain region formed in the silicon layer to be in contact with the gate oxide layer.

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Office Action from the Korean Intellectual Property Office, dated Nov. 17, 2006, in counterpart Korean Patent Application No. 10-2005-0111180.

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