MOS transistor and charge detector using same

Details MOS transistor and charge detector using same MOS transistor and charge detector using same

1994-01-31

1999-08-31

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257243, H01L 27148, H01L 29768

Patent

active

059456973

ABSTRACT:
A MOS transistor comprising channel stoppers formed of a first polysilicon layer to determine a channel width, and a gate electrode formed of a second polysilicon layer, wherein a bias voltage is applied to the channel stoppers. In a charge detector having a source follower circuit with a drive MOS transistor and a load MOS transistor for converting a transferred signal charge into a signal voltage, the MOS transistor of the invention is used as the drive transistor, and its source output voltage is fed back as a bias voltage to the channel stoppers, thereby minimizing both the DC bias variation in the output voltage of the source follower circuit and the nonuniformity in the conversion efficiency.

REFERENCES:
patent: 3936862 (1976-02-01), Moyle
patent: 4235011 (1980-11-01), Butler et al.
patent: 4603426 (1986-07-01), Sauer
patent: 4785343 (1988-11-01), Nezu
patent: 4931850 (1990-06-01), Yamada
patent: 4998161 (1991-03-01), Kimura et al.

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