1984-07-03
1987-12-01
Edlow, Martin H.
357 55, 357 231, H01L 2978
Patent
active
047107901
ABSTRACT:
A gate electrode (4') of a MOS transistor is formed in a depression (16) provided in a substrate (1). Source and drain regions (6 and 7) of the MOS transistor are formed in the substrate (1) to be opposed to each other with the gate electrode (4') being located therebetween.
REFERENCES:
patent: 4243997 (1981-01-01), Natori
Eguchi Kouji
Okamoto Tatsuo
Oosaki Saburou
Edlow Martin H.
Mitsubishi Denki & Kabushiki Kaisha
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