MOS transistor

Details MOS transistor MOS transistor

1988-08-05

1990-12-18

Hille, Rolf

357 237, 357 55, 357 47, H01L 2906, H01L 2701, H01L 2702

Patent

active

049790145

ABSTRACT:
An MOS transistor comprises a projection formed on the surface of a semiconductor substrate, a gate insulating film having an upper portion located on the upper surface of the projection and a pair of side portions extending from the upper portion and located on the side surfaces of the projection, source and drain regions located in the projection to sandwich the gate insulating film and to be exposed on the upper surface of the projection, and a gate electrode, having first and second portions respectively formed on the upper and side portions of the gate insulating film, for generating a depletion layer extending deeper into the projection than would a depletion layer generated by only the first portion, in the portion of the projection facing the first portion.

REFERENCES:
patent: 4015279 (1977-03-01), Ham
patent: 4054894 (1977-10-01), Heagerty et al.
patent: 4797718 (1989-01-01), Schubert

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