MOS thin film transistor

Details MOS thin film transistor MOS thin film transistor

1989-12-29

1991-04-16

Jackson, Jr., Jerome

357 231, 357 2311, 357 49, H01L 2978, H01L 4902, H01L 2713

Patent

active

050087231

ABSTRACT:
Reduction of parasitic coupling capacitances which are otherwise formed between conventional NMOS transistor N type drain regions and the transistor's substrate and well regions is described by using a semiconductor-on-insulator (SOI) substrate and forming the NMOS transistor on a semiconductor (Si) substrate having a buried insulator forming a deep, lightly doped N type subsurface region beneath the conventional surface drain region (but not the source region) which contacts the buried insulator.

REFERENCES:
IEDM, 1987, "Novel Selective in Processing", Mieno et al, pp. 16-19, Dec. 198, Wash., D.C.

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