Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Patent
1995-08-01
1997-05-20
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
257691, 257696, 257724, H01L 23498, H01L 2974
Patent
active
056314760
ABSTRACT:
In a MOS-technology power device chip and package assembly, the MOS-technology power device chip comprises a semiconductor material layer in which a plurality of elementary functional units is integrated, each elementary functional unit contributing a respective fraction to an overall current and including a first doped region of a first conductivity type formed in the semiconductor layer, and a second doped region of a second conductivity type formed inside the first doped region; the package comprises a plurality of pins for the external electrical and mechanical connection; the plurality of elementary functional units is composed of sub-pluralities of elementary functional units, the second doped regions of all the elementary functional units of each sub-plurality being contacted by a same respective metal plate electrically insulated from the metal plates contacting the second doped regions of all the elementary functional units of the other sub-pluralities; each of the metal plates are connected, through a respective bonding wire, to a respective pin of the package.
REFERENCES:
patent: 3434019 (1969-03-01), Carley
patent: 3831067 (1974-08-01), Wislocky et al.
patent: 4008486 (1977-02-01), Byczkowski
patent: 4015278 (1977-03-01), Fukuta
patent: 4055884 (1977-11-01), Jambotkar
patent: 4070490 (1978-01-01), Wickstrom
patent: 4145700 (1979-03-01), Jambotkar
patent: 4236171 (1980-11-01), Shen
patent: 4305087 (1981-12-01), Wislocky
patent: 4329642 (1982-05-01), Luthi et al.
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4399449 (1983-08-01), Herman et al.
patent: 4412242 (1983-10-01), Herman et al.
patent: 4414560 (1983-11-01), Lidow
patent: 4556896 (1985-12-01), Meddles
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4641418 (1987-02-01), Meddles
patent: 4642419 (1987-02-01), Meddles
patent: 4663820 (1987-05-01), Ionescu
patent: 4680853 (1987-07-01), Lidow et al.
patent: 4683553 (1987-07-01), Nilarp
patent: 4789882 (1988-12-01), Lidow
patent: 4794431 (1988-12-01), Park
patent: 4845545 (1989-07-01), Abramowitz et al.
patent: 4853762 (1989-08-01), Ewer et al.
patent: 4878099 (1989-10-01), Nilarp
patent: 4965173 (1990-10-01), Gould
patent: 5047833 (1991-09-01), Gould
patent: 5130767 (1992-07-01), Lidow et al.
patent: 5338974 (1994-08-01), Wisherd et al.
patent: 5356086 (1994-10-01), Pezzani
patent: 5371405 (1994-12-01), Kagawa
European Search Report from European Patent Application No. 94830394.6, filed Aug. 2, 1994.
Ferla Giuseppe
Frisina Ferruccio
Brown Peter Toby
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Morris James H.
SGS--Thomson Microelectronics S.r.l.
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