MOS-technology power device chip and package assembly

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode

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Details

257691, 257696, 257724, H01L 23498, H01L 2974

Patent

active

056314760

ABSTRACT:
In a MOS-technology power device chip and package assembly, the MOS-technology power device chip comprises a semiconductor material layer in which a plurality of elementary functional units is integrated, each elementary functional unit contributing a respective fraction to an overall current and including a first doped region of a first conductivity type formed in the semiconductor layer, and a second doped region of a second conductivity type formed inside the first doped region; the package comprises a plurality of pins for the external electrical and mechanical connection; the plurality of elementary functional units is composed of sub-pluralities of elementary functional units, the second doped regions of all the elementary functional units of each sub-plurality being contacted by a same respective metal plate electrically insulated from the metal plates contacting the second doped regions of all the elementary functional units of the other sub-pluralities; each of the metal plates are connected, through a respective bonding wire, to a respective pin of the package.

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