MOS switch with hysteresis

Details MOS switch with hysteresis MOS switch with hysteresis

1977-06-06

1978-06-27

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307251, 307264, 307289, 307360, 307DIG1, H03K 3295, H03K 3353, H03K 1704

Patent

active

040977722

ABSTRACT:
An MOS circuit possessing hysteresis and positive feedback for fast switching includes a first MOSFET having its gate connected to an input. A second depletion mode MOSFET has its drain connected to the source of the first MOSFET and its source connected to ground. A third depletion mode MOSFET has its drain connected to the source of the first MOSFET and its gate and source connected to the drain of a fourth MOSFET and to the gate of a fifth MOSFET. The gate of the fourth MOSFET is connected to the gate and source of a sixth depletion mode MOSFET and to the drain of the fifth MOSFET. The fifth MOSFET has its source connected to ground.

REFERENCES:
patent: 3612908 (1971-10-01), Heimbigner
patent: 3882331 (1975-05-01), Sasaki
patent: 3900746 (1975-08-01), Kraft et al.
patent: 3916430 (1975-10-01), Heuner et al.
patent: 4023050 (1977-05-01), Fox et al.
patent: 4031409 (1977-06-01), Shimada et al.
Hoffman, "Positive Voltage Translation Circuit"; IBM Tech. Discl. Bull.; vol. 17, No. 8, pp. 2392-2393; 1/1975.

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