Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-06-09
1994-08-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257337, 257378, 257341, H01L 2702
Patent
active
053410033
ABSTRACT:
A MOS semiconductor device is disclosed for monitoring the value of the current flowing through an element by outputting a sense signal. The semiconductor has a main unit element and a sense unit element formed in a semiconductor layer, and the current flowing through the sense unit element is proportional to the current flowing through the main unit element. Both the main unit element and the sense unit element have a base region, a source region, a gate electrode, and a source electrode. A doped region of the same conductivity type as the base regions is formed in the semiconductor layer between the base regions of the main unit element and the sense unit element. This doped region is in contact with the source electrode of the main unit element. This structure decreases the power loss due to the sense signal current and ensures a linear relationship between the sense signal current and the main current.
REFERENCES:
patent: 4893158 (1990-01-01), Mihara et al.
patent: 5097302 (1992-03-01), Fujihira et al.
patent: 5191395 (1993-03-01), Nishimura
Fuji Electric & Co., Ltd.
Hille Rolf
Tran Minhloan
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