Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1991-06-24
1993-08-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 71, 257329, 257347, 257351, H01L 2712, H01L 2713, H01L 2978
Patent
active
052332071
ABSTRACT:
An MOS type semiconductor device having an SOI structure comprises an insulating film formed on a semiconductor substrate, a conductive layer formed on the insulating film serving as a gate electrode, a dielectric film covering upper and side surfaces of the conductive and the insulating film and a single semiconductor layer formed on the dielectric film, the semiconductor layer including a first part formed over an upper surface of the conductive layer, a second part formed on a side surface of the conductive layer and a third part formed over a part of the dielectric film covering directly the insulating film so that the first and third parts serve as a source and a drain or vice versa and the second part serves as a channel.
REFERENCES:
patent: 4554572 (1985-11-01), Chatterjee
patent: 4633284 (1986-12-01), Hansell et al.
Sze, S. M. Semiconductor Devices, c. 1985 Bell Telephone Laboratories, pp. 347-348.
Limanek Robert
Mintel William
Nippon Steel Corporation
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