MOS Semiconductor device and method of manufacturing the same

Details MOS Semiconductor device and method of manufacturing the same MOS Semiconductor device and method of manufacturing the same

1982-07-09

1985-06-11

Edlow, Martin H.

357 238, 357 236, 357 2311, 357 2312, 357 233, 357 23, H01L 2978

Patent

active

045232130

ABSTRACT:
An MOS semiconductor device, wherein a buried region of silicon oxide or silicon nitride extends partly over the bottom plane of the channel region of an MOS transistor.

REFERENCES:
patent: 3514676 (1976-06-01), Fa
patent: 4023195 (1977-05-01), Richman

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