MOS semiconductor device and method of manufacturing the same

Details MOS semiconductor device and method of manufacturing the same MOS semiconductor device and method of manufacturing the same

1997-07-15

1999-06-15

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257767, 257735, 257742, H01L 2348, H01L 2352, H01L 2940

Patent

active

059125098

ABSTRACT:
A semiconductor device includes a first diffusion layer, an insulating film, and an electrode. The first diffusion layer is formed on the surface of a first-conductivity-type semiconductor substrate and has an opposite conductivity type. The insulating film is formed on the first diffusion layer. The electrode is made of a conductor layer formed on the insulating film. The width of the electrode is smaller than a value twice the length by which an impurity doped into the surface of the semiconductor substrate, using the electrode as a mask, laterally diffuses during annealing to a position immediately below the electrode.

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