Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-05-14
1997-12-30
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257262, 257263, 257273, 257330, 257331, 257332, 257333, 257342, 257376, 257378, 257517, 257526, H01L 2980, H01L 2976, H01L 2994, H01L 2900
Patent
active
057033846
ABSTRACT:
In IGBTs or, respectively, MOSFETs a parasitic junction-FET effect can be nearly avoided on the basis of an insulation layer introduced between the two base zones and into which an electrode is additionally embedded. The on-resistance is lowered as a result thereof. In an advantageous development, a potential activation of the parasitic bipolar structure (latch-up) can also be prevented.
REFERENCES:
patent: 4791462 (1988-12-01), Blanchard et al.
patent: 5396087 (1995-03-01), Baliga
Jpn. J. Appl. Phys. vol. 33 (1994) Part 1, No. 1B, Jan. 1994, Latch-Up Suppressed Insulated Gate Bipolar Transistor by the Deep P.sup.+ Ion Implantation under the n.sup.+ Source, by Byeong-Hoon Lee et al, pp. 563-566.
Solid-State Electronics, vol. 37 No. 3, The Effect of the Hole Current on the Channel Inversion in Trench Insulated Gate Bipolar Transistors (TIGBT), (1994), pp. 507-514.
Saadat Mahshid D.
Siemens Aktiengesellschaft
Soward Ida M.
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