MOS semiconductor component having improved transmission propert

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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257262, 257263, 257273, 257330, 257331, 257332, 257333, 257342, 257376, 257378, 257517, 257526, H01L 2980, H01L 2976, H01L 2994, H01L 2900

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active

057033846

ABSTRACT:
In IGBTs or, respectively, MOSFETs a parasitic junction-FET effect can be nearly avoided on the basis of an insulation layer introduced between the two base zones and into which an electrode is additionally embedded. The on-resistance is lowered as a result thereof. In an advantageous development, a potential activation of the parasitic bipolar structure (latch-up) can also be prevented.

REFERENCES:
patent: 4791462 (1988-12-01), Blanchard et al.
patent: 5396087 (1995-03-01), Baliga
Jpn. J. Appl. Phys. vol. 33 (1994) Part 1, No. 1B, Jan. 1994, Latch-Up Suppressed Insulated Gate Bipolar Transistor by the Deep P.sup.+ Ion Implantation under the n.sup.+ Source, by Byeong-Hoon Lee et al, pp. 563-566.
Solid-State Electronics, vol. 37 No. 3, The Effect of the Hole Current on the Channel Inversion in Trench Insulated Gate Bipolar Transistors (TIGBT), (1994), pp. 507-514.

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