MOS semiconductive device

Details MOS semiconductive device MOS semiconductive device

1990-04-13

1992-07-28

Hille, Rolf

357 231, 357 67, 357 71, H01L 2978

Patent

active

051344513

ABSTRACT:
A semiconductive device which comprises a gate insulating film composed of a metal oxide film, source/drain electrodes, and metal silicide layers formed on the source/drain regions is described.

REFERENCES:
patent: 4384301 (1983-05-01), Tasch, Jr. et al.
patent: 4510670 (1985-04-01), Schwabe et al.
patent: 4714951 (1987-12-01), Baudrant et al.
patent: 4735680 (1988-04-01), Yen
patent: 4746219 (1988-05-01), Holloway et al.
patent: 4866491 (1989-09-01), Solomon et al.

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