MOS rear end processing

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

427 94, B05D 512, G03C 726

Patent

active

046209867

ABSTRACT:
A process for the reduction of defect formation in conductive layers of semiconductor bodies during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any high temperature process greater than 200 degrees C. Hermetic passivation is achieved by depositing on the conductive layer a composite film consisting of a lower, tensile layer and an upper, compressive layer with the net force of the passivation film being tensile.

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