MOS read-only memory systems

Details MOS read-only memory systems MOS read-only memory systems

1985-11-15

1987-11-24

Popek, Joseph A.

Static information storage and retrieval

Read only systems

Semiconductive

365210, G11C 1700

Patent

active

047093528

ABSTRACT:
A MOS ROM system is arranged such that during a readout operation a current flows from at least one data line selected from among a plurality of data lines. The read and sense circuit detects a memory state of a selected memory cell based on the amount of inflow current. A non-selected memory cell does not contribute to a word line load capacitance, and the word line load capacitance upon switching word lines can be reduced. A signal transfer rate can therefore be increased, and a data read rate can thereby be speeded up. Moreover, a read and sense circuit for a ROM is adapted such that first and third MOS transistors and a first current supply circuit, and second and fourth MOS transistors and a second current supply circuit are associated with each other, and each connected in series betweeen a low supply voltage and high supply voltage. The input side of the ROM can be kept at a stabilized low potential, and information stored in a selected memory element can be read out based on the value of an inflow current into the read and sense circuit.

REFERENCES:
patent: 4366555 (1982-12-01), Hu
patent: 4425632 (1984-01-01), Iwahashi et al.
patent: 4592021 (1986-05-01), Suzuki et al.

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