MOS-RAM

Details MOS-RAM MOS-RAM

1975-05-27

1976-12-28

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307235F, 307238, 307270, 307279, 307DIG1, 307DIG3, 307DIG4, H03K 3353, H03K 513, H03K 518, H03K 3286

Patent

active

040004139

ABSTRACT:
Improved circuits for a MOS-RAM including an on chip TTL compatible high-level clock driver and sense amplifier. The driver employs a unique feedback and delay scheme allowing the high-level line to be quickly and efficiently discharged without using a large, high capacitance device. The upward swing of the control signal for the sense amplifier includes a perturbation which increases the sensitivity of the amplifier.

REFERENCES:
patent: 3757310 (1973-09-01), Croxon
patent: 3778784 (1973-12-01), Karp et al.
patent: 3892984 (1975-07-01), Stein
patent: 3906464 (1975-09-01), Lattin

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