Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-03-16
1997-03-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257296, 257298, 257300, H01L 27108, H01L 2900
Patent
active
056082584
ABSTRACT:
A MOS precision capacitor is formed in an integrated circuit including a p-mos and n-mos transistor without adding to the process steps used in forming the p-mos and n-mos transistor. The MOS precision capacitor includes a n-well formed concurrently with a n-well of the p-mos transistor, a n-type region formed concurrently with a threshold adjust region of the p-mos transistor, an oxide layer formed concurrently with gate oxide layers of the p-mos and n-mos transistors, a first electrode formed over the n-type region, at least one n+ region formed concurrently with source and drain regions of the n-mos transistor by self aligning to the sidewall of the first electrode, and a second electrode connected to the at least one n+ region. Good gate oxide tracking between the MOS precision capacitor, the p-mos transistor, and the n-mos transistor, is provided by forming the n-type region of the MOS precision capacitor with a dopant concentration approximately equal to that of the threshold adjust region of the p-mos transistor, and approximately within an order of magnitude of that of the n-mos transistor. Good ground isolation for the MOS precision capacitor is provided by forming the MOS precision capacitor in its own n-well. Low voltage and signal frequency dependency for the MOS precision capacitor is provided by respectively forming the n-type and n+ regions between the first and second electrodes of the MOS precision capacitor such that their respective dopant concentrations are greater than that of the n-well.
REFERENCES:
patent: 5055905 (1991-10-01), Anmo
patent: 5136357 (1992-08-01), Hesson et al.
patent: 5264723 (1993-11-01), Strauss
patent: 5266821 (1993-11-01), Chern et al.
patent: 5360989 (1994-11-01), Endo
Kranzen Bruno
Rajkanan Kamal
Martin Wallace Valencia
Saadat Mahshid D.
Zilog Inc.
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