Miscellaneous active electrical nonlinear devices – circuits – and – External effect – Temperature
Patent
1993-04-15
1995-03-07
Wambach, Margaret Rose
Miscellaneous active electrical nonlinear devices, circuits, and
External effect
Temperature
327565, 327566, 327432, 327108, H03K 326
Patent
active
053961196
ABSTRACT:
A device including a MOS power transistor, and a temperature sensor including a bipolar transistor integrated in the MOS transistor and having its emitter and collector connected directly to the source and gate terminals respectively of the MOS transistor. Parallel to the base-emitter junction of the bipolar transistor, there is connected a voltage source for biasing the junction to such a value that the bipolar transistor remains off at room temperature, and absorbs the maximum current supplied by a drive circuit of the MOS transistor at the maximum permissible temperature TUM. At temperature TUM, the bipolar transistor takes over control of the gate-source voltage of the MOS transistor for maintaining thermal feedback of the device at maximum temperature TUM.
REFERENCES:
patent: 4430586 (1984-02-01), Hebenstreit
patent: 4901127 (1990-02-01), Chow et al.
patent: 4940906 (1990-07-01), Gulczynski
patent: 4992844 (1991-02-01), Yakushiji
patent: 5001366 (1991-03-01), Masuda et al.
Patent Abstracts of Japan, vol. 9, No. 99 (E-311)(1822) Apr. 27 1985 & JP-AS-59224172 (Hitachi Seisakusho) 17 Dec. 1984.
Botti Edoardo
Brasca Guido
SGS--Thomson Microelectronics S.r.l.
Wambach Margaret Rose
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