MOS power structure with protective device against overvoltages

Details MOS power structure with protective device against overvoltages MOS power structure with protective device against overvoltages

1989-06-15

1990-04-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 45, 437 59, 437904, 357 2313, 357 43, H01L 21283

Patent

active

049160850

ABSTRACT:
A MOS power structure made up of at least one MOS cell with gate electrode, drain electrode, source electrode, well-region and of a bi-polar parasitic transistor provided with a protective device for the gate and drain against overvoltages. The protective device consists of a further bi-polar transistor with optional addition of a zener diode.

REFERENCES:
patent: 4686551 (1987-08-01), Mihara
patent: 4688323 (1987-08-01), Yoshida et al.
patent: 4721686 (1988-01-01), Contiero et al.
patent: 4814288 (1989-03-01), Kimura et al.

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