Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1993-01-13
1998-01-27
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 66, 257 67, 257 69, 437233, H01L 2908
Patent
active
057124965
ABSTRACT:
A thin film field effect transistor has a three-layer structure including a polycrystalline semiconductor layer to be a channel region, a conductive layer to be a gate electrode and a insulating layer to be a gate insulating film between the channel region and the gate electrode. The roughness of an interface between the channel region and the gate insulating film is less than a few nm so that the current drivability of the transistor is improved.
REFERENCES:
patent: 3304469 (1967-02-01), Weimer
patent: 4511800 (1985-04-01), Harbeke et al.
patent: 4597160 (1986-07-01), Ipri
patent: 4915772 (1990-04-01), Fehlner et al.
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5064779 (1991-11-01), Hasegawa
S.M. Sze, Physics of Semiconductor Devices, Second Ed., pp. 492-493, 509 (John Wiley & Sons 1981).
Shyh Wang, Fundamentals of Semiconductor Theory and Device Physics, p. 452 (Prentice Hall 1989).
Kojima Yoshikazu
Takahashi Hiroshi
Guay John
Jackson, Jr. Jerome
Seiko Instruments Inc.
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